FS150R12KT4_B11 SP000369616 Infineon IGBT Module N-CH 1.2KV 150A

FS150R12KT4B11BOSA1

Manufacturer: Infineon
Product Type: IGBT Modules
Configuration: 6-Pack
Collector-emitter maximum voltage VCEO: 1.2 kV
Collector-emitter saturation voltage: 1.75 V
Continuous collector current at 25 C: 150 A
Gate-emitter leakage current: 100 nA
Pd-power dissipation: 750 W
Package / Cabinet: Econo 3
Minimum working temperature: - 40 C
Maximum working temperature: + 150 C
Package: Tray
Height: 17mm
Length: 122mm
Gate/emitter maximum voltage: 20 V
Mounting Style: Chassis Mount
Series: Trenchstop IGBT4 - T4
Packing Quantity: 10 PCS
Subcategory: IGBTs
Technology: Si

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